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| SavantIC Semiconductor www..com Product Specification Silicon NPN Power Transistors 2SC2123 DESCRIPTION *With TO-3 package *Short switching times. *High dielectric strength. APPLICATIONS *For use in TV horizontal deflection stage PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1000 400 7 12 50 175 -55~175 UNIT V V V A W SavantIC Semiconductor www..com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=50mA; IB=0; IE=1mA; IC=0; IC=10A;IB=2.5 A IC=10A;IB=2.5 A VCB=1000V;IE=0 VEB=7V;IC=0 IC=8A ; VCE=5V IC=0.5A ; VCE=10V 5 6 MIN 400 7 2SC2123 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT TYP. MAX UNIT V V 3.3 2.2 1.0 1.0 V V mA mA MHz 2 SavantIC Semiconductor www..com Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2123 Fig.2 Outline dimensions 3 |
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